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 ZXTP25100BFH 100V, SOT23, PNP medium power transistor
Summary
BV(BR)CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m PD = 1.25W Complementary part number ZXTN25100BFH typical
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * * * High power dissipation SOT23 package High peak current Low saturation voltage 140V forward blocking voltaget 7V reverse blocking voltage
E
Applications
* * * * MOSFET and IGBT gate driving DC - DC converters Motor drive Relay, lamp, and solenoid drive
Pinout - top view
Ordering information
Device ZXTP25100BFHTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000
Device marking
056
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25100BFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (b) Peak pulse current Power dissipation at TA =25C (a) Linear derating factor Power dissipation at TA =25C (b) Linear derating factor Power dissipation at TA =25C (c) Linear derating factor Power dissipation at TA =25C (d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEX VCEO VECX VEBO IC ICM PD PD PD PD Tj, Tstg Limit -140 -140 -100 -7 -7 -2 -5 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to 150 Unit V V V V V A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs.
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25100BFH
Characteristics
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25100BFH
Electrical characteristics (at TAMB = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-base breakdown voltage Collector cut-off current Collector emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage Symbol BVCBO BVCEX Min. -140 -140 Typ. -165 -165 Max. Unit V V Conditions IC = -100 A IC = -100 A, RBE < 1k or -0.25V < VBE < 1V IC = -10mA (*)
BVCEO
-100
-125
V
BVECX
-7
8.2
V
IE = -100 A, RBC < 1k or -0.25V < VBC < 0.25V IE = -100 A VCB = -112V VCB = -112V, TAMB= 100C VCE = -112V; RBE < 1k or -0.25V < VBE < 1V VEB = -5.6V IC = -0.5A, IB = -50mA (*) IC = -0.5A, IB = -10mA (*) IC = -1A, IB = -100mA (*) IC = -2A, IB = -200mA (*) IC = -2A, IB = -200mA (*) IC = -2A, VCE = -2V (*) IC = -10mA, VCE = -2V (*) IC = -1A, VCE = -2V (*) IC = -2A, VCE = -2V (*)
BVEBO ICBO ICEX
-7
-8.2 <-1 -50 -20 -100
V nA A nA
IEBO VCE(sat)
<-1 -60 -240 -100 -215
-50 -90 -350 -130 -295 -1000 -950 300
nA mV mV mV mV mV mV
Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio
VBE(sat) VBE(on) hFE 100 55 15
-900 -830 200 105 25 200 15 31 384
Transition frequency Output capacitance Turn-on time Turn-off time
fT COBO t(on) t(off)
MHz 25 pF ns ns
2%.
IC = -100mA, VCE = -5V f = 100MHz VCB = -10V, f = 1MHz (*) VCC = -10V, IC = -500mA, IB1 = IB2= -50mA
NOTES: (*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
4
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ZXTP25100BFH
Typical characteristics
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
5
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ZXTP25100BFH
Package outline - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
(c) Zetex Semiconductors plc 2006
6
www.zetex.com


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